الوصف
Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-225-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 400 V Collector- Base Voltage VCBO: 100 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.5 V Maximum DC Collector Current: 1.5 A Pd - Power Dissipation: 1.4 W Gain Bandwidth Product fT: 3 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Height: 11.04 mm Length: 7.74 mm Technology: Si Width: 2.66 mm Continuous Collector Current: 1.5 A DC Collector/Base Gain hfe Min: 8 BJTs - Bipolar Transistors