IRF9540N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features
Number of Channels: 1 Channel Transistor Polarity: P-Channel Drain-Source Breakdown Voltage (Vds): -100V Continuous Drain Current (Id): -23A Drain-Source Resistance (Rds On): 0.117Ohms Gate-Source Voltage (Vgs): 20V Gate Charge (Qg): 97 nC Operating Temperature Range: -55 - 175°C Power Dissipation (Pd): 140W
Specification