Description
IRF630 is a third-generation power MOSFET specially designed for applications which required high-speed switching. This component is a great combination of low on-state resistance, cost-effective, and rugged design.
IRF630 is designed to sustain load voltage up to 200 V and 9 A current. It can drive current up to 36 A in pulse mode for 300 μs with a duty cycle of 2%. This Power MOSFET is specially designed to minimize input capacitance and gate change, and available in package TO-220.
Features
- Extremely high dv/dt capability
- Fast switching
- Low intrinsic capacitance
- Ease of paralleling
- Gate charge minimized
- Simple drive requirement
Specifications:
- Transistor type: N-channel
- Maximum applied voltage from drain-to-source (VDS): 200 V
- Maximum Drain current (continuous) ID: 9 A
- Maximum Drain Current (Pulse): 36 A
- Maximum Power dissipation: 74 W
- On-state resistance between drain and source: 0.40 Ω
gate-to-source voltage: ±20 V
- Gate charge QD: 43 nC
- Dynamic dv/dt ruggedness: 5.8 V/ns
- Operating junction and storage temperature range: -55 to 150 ˚C
- Package: TO-220