Description
The PN2222A is a versatile NPN silicon transistor designed for low to moderate power amplification and switching applications. Key features include its NPN bipolar silicon construction, a standard TO-92 package with a typical E-B-C pinout, high switching speeds, good DC current gain, and capabilities up to 40V collector-emitter and 600mA continuous current. Its low cost, high availability, and versatility make it popular for Arduino-based and IoT projects.
Features
- NPN Bipolar Silicon Construction
A silicon-based NPN Bipolar Junction Transistor (BJT) that uses electrons as charge carriers.
- TO-92 Package
A common plastic package with a standard E-B-C (Emitter-Base-Collector) pin-out, making it easy to use and integrate into circuits.
- Low Cost and Availability
It is an inexpensive and readily available component, ideal for general-purpose electronics and DIY projects.
- Key Electrical Characteristics
- Voltage Ratings
Can handle up to 40V between the collector and emitter, and 75V between the collector and base.
- Current Ratings
Handles up to 600mA of continuous collector current.
- DC Current Gain (hFE)
Features a relatively high gain (hFE), typically ranging from 100 to 300, which allows a small base current to control a larger collector current.
- Transition Frequency (fT)
Has a high transition frequency (e.g., 250-300 MHz), making it suitable for high-frequency switching and amplification.
- Low Saturation Voltage
Possesses a low saturation voltage (VCE(sat)), which minimizes power loss when the transistor is fully switched on.
- Power Dissipation
Capable of dissipating 625mW of power